 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| MBRS410ET3 Preferred Device Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes, in surface mount applications where compact size and weight are critical to the system. Typical applications are ac/dc and dc-dc converters, reverse battery protection, and "Oring" of multiple supply voltages and any other application where performance and size are critical. http://onsemi.com * * * * * * * * Very Low VF Accompanied by Low IR 1st in the Market Place with a 10 VR Schottky Rectifier Small Compact Surface Mountable Package with J-Bend Leads Rectangular Package for Automated Handling Highly Stable Oxide Passivated Junction Designed for Low Leakage Excellent Ability to Withstand Reverse Avalanche Energy Transients Guardring for Stress Protection SCHOTTKY BARRIER RECTIFIERS 4.0 AMPERES 10 VOLTS SMC CASE 403 PLASTIC Mechanical Characteristics: * Case: Epoxy, Molded * Weight: 217 mg (approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal * * * * * Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260C Max. for 10 Seconds Shipped in 16 mm Tape and Reel, 2500 units per reel Polarity: Notch in Plastic Body Indicates Cathode Lead ESD Ratings: Machine Model = C ESD Ratings: Human Body Model = 3B Marking: B4E1 MARKING DIAGRAM YWW B4E1 Y = Year WW = Work Week B4E1= Device Code ORDERING INFORMATION Device Package SMC Shipping 2500/Tape & Reel MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (@ TL = 130C) Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) Operating Junction Temperature Symbol VRRM VRWM VR IO IFSM Value 10 Unit V MBRS410ET3 4.0 250 A A Preferred devices are recommended choices for future use and best overall value. TJ -65 to +150 C (c) Semiconductor Components Industries, LLC, 2001 1 September, 2001 - Rev. 1 Publication Order Number: MBRS410ET3/D MBRS410ET3 THERMAL CHARACTERISTICS Characteristic Thermal Resistance - Junction-to-Lead Thermal Resistance - Junction-to-Ambient Symbol RJL RJA 5 mm x 5 mm (Note 2) 12 109 1 Inch x 1/2 inch 7.0 59 Unit C/W ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (Note 1) (IF = 2.0 A) (IF = 4.0 A) (IF = 8.0 A) Maximum Instantaneous Reverse Current (Note 1) (Rated dc Voltage, VR = 5.0 V) (Rated dc Voltage, VR = 10 V) 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 2. Mounted with Minimum Recommended Pad Size, PC Board FR4. 100 IF, INSTANTANEOUS FORWARD CURRENT (AMPS) 25C VF @ 125C 10 100C 75C -40C 100 IF, MAXIMUM INSTANTANEOUS FORWARD CURRENT (AMPS) VF @ 125C 10 100C 75C IR VF TJ = 25C 0.475 0.500 0.525 TJ = 25C 50 150 TJ = 100C 0.370 0.395 0.430 TJ = 100C 2000 4000 mA V 25C 1 1 0.1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 0.1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage 1.0E-02 IR, REVERSE CURRENT (AMPS) IR @ 125C 100C 75C C, CAPACITANCE (pF) 10,000 25C f = 1 MHz 1.0E-03 1.0E-04 1.0E-05 25C 1.0E-06 1.0E-07 1000 0 2 4 6 8 10 0 2 4 6 8 10 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 3. Typical Reverse Current Figure 4. Typical Capacitance http://onsemi.com 2 MBRS410ET3 9 8 IF, AVERAGE FORWARD CURRENT (AMPS) 7 6 5 4 3 2 1 0 100 110 120 130 140 150 160 SQUARE WAVE dc RATED VOLTAGE APPLIED RqJL = 12 C/W TJ = 125C PFO, AVERAGE POWER DISSIPATION (WATTS) 3.5 dc 3 TJ = 125C 2.5 2 SQUARE WAVE 1.5 1 0.5 0 0 1 2 3 4 5 6 7 8 9 TL, LEAD TEMPERATURE (C) IF(AV), AVERAGE FORWARD CURRENT (AMPS) Figure 5. Current Derating - Junction to Lead Figure 6. Forward Power Dissipation R(t), TRANSIENT THERMAL RESISTANCE (C/W) 100 D = 0.5 0.2 0.1 10 0.05 0.02 0.01 1 SINGLE PULSE 0.1 0.00001 0.0001 0.001 0.01 0.1 t, TIME (S) 1 10 100 1000 Figure 7. Thermal Response, Junction to Ambient (min pad) R(t), TRANSIENT THERMAL RESISTANCE (C/W) 100 D = 0.5 0.2 10 0.1 0.05 0.02 1 0.01 SINGLE PULSE 0.1 0.00001 0.0001 0.001 0.01 0.1 t, TIME (S) 1 10 100 1000 Figure 8. Thermal Response, Junction to Ambient (1 inch pad) http://onsemi.com 3 MBRS410ET3 PACKAGE DIMENSIONS SMC PLASTIC PACKAGE CASE 403-03 ISSUE B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P. INCHES DIM MIN MAX A 0.260 0.280 B 0.220 0.240 C 0.075 0.095 D 0.115 0.121 H 0.0020 0.0060 J 0.006 0.012 K 0.030 0.050 P 0.020 REF S 0.305 0.320 MILLIMETERS MIN MAX 6.60 7.11 5.59 6.10 1.90 2.41 2.92 3.07 0.051 0.152 0.15 0.30 0.76 1.27 0.51 REF 7.75 8.13 S A D B C J H K P ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada JAPAN: ON Semiconductor, Japan Customer Focus Center 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan 141-0031 Phone: 81-3-5740-2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. http://onsemi.com 4 MBRS410ET3/D |
Price & Availability of MBRS410ET3
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |